As-deposited ferroelectric HZO on a III–V semiconductor
نویسندگان
چکیده
By electrical characterization of thin films deposited by atomic layer deposition, Hf x Zr 1−x O 2 (HZO) is shown to be ferroelectric as-deposited, i.e., without any annealing step, using a thermal budget 300 °C. fabricating laminated HZO rather than the traditional solid-solution HZO, remanent polarization P r = 11 μC/cm and endurance exceeding 10 6 are obtained. Films grown on thermally reactive InAs semiconductor substrates showed capacitance–voltage modulation hysteresis, which varied depending interfacial oxide construction. Additionally, trade-off between higher lower gate leakage was found when comparing different laminate structures deposition temperatures. Scaling thickness oxides revealed that remain at 6.5 nm with an increased breakdown field for thinner devices.
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2022
ISSN: ['1520-8842', '0003-6951', '1077-3118']
DOI: https://doi.org/10.1063/5.0097462